Firstack 2FSC0110
Compact High-Speed SiC Driver Core
Firstack 2FSC0110
A compact, high-speed, dual-channel driver core specifically designed for 1200V SiC MOSFETs. It features a short propagation delay and high CMTI, making it ideal for high-frequency power conversion.
Distributor's Review & Application Insight
FAE Insight: When switching frequency and efficiency are paramount, the 2FSC0110 is the core to use. Its extremely low propagation delay and high Common-Mode Transient Immunity (CMTI) are essential for reliably driving SiC MOSFETs at hundreds of kilohertz. We see this core being designed into high-power-density applications like onboard EV chargers, server power supplies, and solar microinverters. It provides the core performance needed to truly take advantage of SiC technology.
Key Features
- Optimized for 1200V SiC MOSFETs
- Ultra-low propagation delay (< 120 ns)
- High CMTI (> 100 kV/µs)
- Compact surface-mount package
- Integrated isolated power supply
- Advanced protection features
Applications
This driver core is ideal for high-frequency applications where compactness and performance are critical, including EV onboard chargers, solar inverters, server PSUs, and telecom power modules.
Technical Specifications
| Target Device | SiC MOSFET |
| Peak Output Current | 10A |
| Propagation Delay | < 120 ns |
| CMTI | > 100 kV/µs |
| Supply Voltage | 15V ± 5% |
| Operating Temperature | -40°C to +105°C |
Frequently Asked Questions
Q: Why is high CMTI so important for SiC drivers?
A: SiC MOSFETs switch extremely fast, creating very high dv/dt (voltage change over time). This can induce noise across the isolation barrier, potentially corrupting the PWM signal and causing catastrophic failure. A driver with high CMTI, like the 2FSC0110, can withstand this noise and maintain stable operation.
Q: Can this core be used for IGBT applications?
A: While technically possible, this core is specifically optimized for SiC MOSFETs. For IGBT applications, we recommend the 2FHC0215 which offers better gate voltage levels and protection features tailored for IGBTs.