A compact, high-speed, dual-channel driver core specifically designed for 1200V SiC MOSFETs. It features a short propagation delay and high CMTI, making it ideal for high-frequency power conversion.
FAE Insight: When switching frequency and efficiency are paramount, the 2FSC0110 is the core to use. Its extremely low propagation delay and high Common-Mode Transient Immunity (CMTI) are essential for reliably driving SiC MOSFETs at hundreds of kilohertz. We see this core being designed into high-power-density applications like onboard EV chargers, server power supplies, and solar microinverters. It provides the core performance needed to truly take advantage of SiC technology.
| Target Device | SiC MOSFET |
| Peak Output Current | 10A |
| Propagation Delay | < 70 ns |
| CMTI | > 100 kV/µs |
A: SiC MOSFETs switch extremely fast, creating very high dv/dt (voltage change over time). This can induce noise across the isolation barrier, potentially corrupting the PWM signal and causing catastrophic failure. A driver with high CMTI, like the 2FSC0110, can withstand this noise and maintain stable operation.